High current transistor packaging for very low on-resistance

A high current, low voltage, single sided MOSFET device has been designed and experimentally verified. The device is based on a die fabricated in standard CMOS and a special package based on PCB technique fabricated in a standard PCB process. The transistor, its special package and its mounting on a mother board are carefully analyzed through simulation. The experimental verification indicates an on-resistance less than 0.5mohm, corresponding to a specific on-resistance of 6.7mohm-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .