Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT

20220 citationsJournal Article

Authors

Jaromı́r Marek · Slovak University of Technology in Bratislava

Aleš Chvála · Slovak University of Technology in Bratislava

M. Minárik · Slovak University of Technology in Bratislava

Abstract

The paper presents part of results of double-pulse switching tests and extraction of dynamic on-resistance of packaged normally-off GaN HEMTs. Devices were tested under various switching conditions. Effects of the switching parameters on dynamic on-resistance were analysed and compared. Samples were exposed to repetitive SC stress for several thousand repetitions of switching. Shift of on-resistance due to short-circuit stress was observed, but not of significant magnitude.

Topics & Keywords

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Semiconductor materials and devices

Publication Details

DOI: 10.1109/asdam55965.2022.9966798

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Effect of Repetitive Short-Circuit Stress on dynRdson of p-GaN HEMT

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Abstract

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Publication Details