Design of n-CdS/p-CuInTe₂/p ⁺-MoS₂ thin film solar cell with a power conversion efficiency of 34.32%

Copper indium telluride (CuInTe 2 )-based n -CdS/ p -CuInTe 2 / p + -MoS 2 double-heterostructure solar cell has been investigated numerically by solar cell capacitance simulator (SCAPS-1D). Initially, an adjusted condition among the most influencing parameters e.g. thickness, carrier doping level, and bulk defects of active materials such as CdS window, CuInTe 2 absorber, and p + -MoS 2 back surface field (BSF) layers has been obtained by a systematic computation. The proposed solar cell exhibits an improved power conversion efficiency (PCE) of 34.32% with V OC =0.927 V, J SC = 42.50 mA/cm 2 , and FF = 87.14% under the optimized condition. The PCE can be further enhanced to 38.87% introducing sub-bandgap absorption in the MoS 2 (300 nm) BSF with Urbach energy, E 0 of 0.4 eV. These detailed simulation results reveal a huge potential of CuInTe 2 absorber with MoS 2 BSF layer for the manufacture of a cost-effective, high-efficiency double-heterojunction thin film solar cell.