Reduction of Junction Temperature with Local Lifetime Control and High Density Arranged Diode for 3^rd Gen. 650V RC-IGBT

In order to reduce power losses and Junction-to-case temperature (ΔT(j-c)) of RC-IGBTs, optimization of both carrier distribution in drift-layer and the diode layout is required. In this study, we propose 3^rd generation 650V RC-IGBT based on CSTBT™, which achieves a significant reduction of AT(j-c) using Local Lifetime Control (LLC) with proton implantation and high density arranged diode layout. Our proposed 3rd generation RC-IGBT successfully reduces power losses by 5% and AT(j-c) by 18%.