Ultrahigh Speed on-Chip Micro/Nano Plasma Devices: Switching Speed and Turn-On Voltage Optimization

Recent advances in micro- and nano-processes have resulted in substantial advancements in micro/nano plasma devices, resulting in superior properties such as picosecond switching speed, high output power beyond that of conventional electronic devices, and exceptional tolerance to high temperature radiation. Despite this progress, certain issues such as high working voltage, electrodes susceptible to damage, and limited reliability have hindered their further practical applications. In this article, we propose a novel approach based on the design of the device electrode structure with a submicrometer gap, aiming to reduce the working voltage by optimizing the device’s surface electric field. Compared to traditional techniques, such as gap reduction or gate structure addition, this approach offers advantages including lower production costs, better consistency, and the ability to achieve wafer-level fabrication. More importantly, the approach improves the device’s switching speed significantly. Experimental results show that this method has the potential to reduce the working voltage by 34 V and increase the switching speed by nearly double, up to a maximum of 3.19 V/ps. We elaborate on the optimization mechanism and demonstrate the potential of this approach, providing new ideas for further enhancing the performance and reliability of micro/nano plasma devices.