Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

202366 citationsJournal Articlegold Open Access

Authors

Nicolás Morales-Durán · Flatiron Health (United States)

Jie Wang · Harvard University

Gabriel R. Schleder · Harvard University

Mattia Angeli · Harvard University

Ziyan Zhu · SLAC National Accelerator Laboratory

Efthimios Kaxiras · Harvard University

Cécile Repellin ·

Abstract

The effect of applied pressure on fractional Chern insulators (FCIs) in moir\'e TMDs is numerically studied, indicating that pressure can enhance the many-body gap of these topologically ordered phases. This is supported by showing that, within the region of stability of the FCI, the quantum geometry of the topmost moir\'e flat band almost satisfies the ideal condition.

Topics & Keywords

Topological Materials and Phenomena Quantum and electron transport phenomena Graphene research and applications

Publication Details

Published in: Physical Review Research

Volume 5, Issue 3

DOI: 10.1103/physrevresearch.5.l032022

Field-Weighted Citation Impact: 13.40

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Pressure-enhanced fractional Chern insulators along a magic line in moiré transition metal dichalcogenides

Authors

Abstract

Topics & Keywords

Publication Details