Extraordinary magnetoresistance in a 2-terminal structure

Extraordinary magnetoresistance (EMR) is a phenomenon discovered by Solin et al. at the interface between a metal (high conductivity material) and a semiconductor (high mobility material). EMR is a much larger effect than the other magnetoresistive phenomenon, reaching values up to 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> %. In this work, we present simulation results to determine if it is possible to realize EMR-based power limiters, by defining more clearly the differences between 4- and 2-terminal geometries in term of performance for power limiter applications, as well as the dependence of the EMR with different material properties and different shapes.