Vibrational analysis of size-dependent thermo-piezo-photo-electric semiconductor medium under memory-dependent Moore–Gibson–Thompson photo-thermoelasticity theory

This study presents a comprehensive approach to vibrational analysis in a size-dependent, orthotropic thermo-piezo-photo-electric semiconductor half-space under Moore–Gibson–Thompson (MGT) photo-thermoelasticity theory with memory-dependent derivatives. Following Eringen's nonlocal elasticity theory, the governing equations for the considered material are derived. The normal mode technique is applied to investigate the photothermal excitation process. Focusing on the interface adjacent to the vacuum, the study considers plasma, thermal, and mechanical stress boundary conditions to determine fundamental physical quantities. Through a detailed exploration, this research examines the impact of various thermo-piezo-photo-electric models, time, nonlocal parameters, and spatial coordinates on different physical quantities. The effects are meticulously analyzed and visually represented through graphical illustrations. While the literature survey reveals numerous studies on vibrational analysis in thermo-piezo-photo-electric semiconductor mediums under different thermoelasticity theories, to the best of the authors' knowledge, no research emphasizing vibrational analysis in a size-dependent thermo-piezo-photo-electric semiconductor medium has been conducted. Moreover, the effect of memory-dependent MGT photo-thermoelasticity theory on a size-dependent thermo-piezo-photo-electric semiconductor half-space has not been illuminated until now, significantly defining the novelty of the conducted research.