Passive CMOS Strip Detectors for High Energy Particle Detection

Current trackers and high energy particle experiments are populated with silicon detectors, which provide fast precise signal, can cover large areas and are available in silicon foundries. The utilization of a CMOS silicon foundry for fabricating large area silicon detectors is possible but the sensors should be stitched, connecting several reticles to form a strip, or a large area pixel. These detectors can be used for high energy particle detection as well as large area detectors for medical application. This project shows results of the first production of silicon strip detectors produced in a CMOS foundry with 150 nm technology using stitching of 1 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> reticles. The wafer consist of high resistivity 150 μm thick float zone silicon. The strip detectors are fabricated in two sizes, 2.1 cm long and 4.1 cm long. Here the characterization, simulation and performance of those strip detectors under different applications will be shown, without and with irradiation of the silicon. We will demonstrate that stitching strips do not show any negative effect on their performance.