A High-Speed GaAs 256 × 4-Bit Ram

A fully functional 256×4-bit GaAs RAM has been demonstrated with an access time of 1 ns and a power dissipation of 700 mW, excluding the final output drivers. A self-aligned-gate E/D MESFET process was used where typical Ε-mode FET's have transconductances of 200 mS/mm. To obtain high yield, a unique Monte Carlo analysis was used to optimize the design.