A 1.2 dB NF 16.2 dB Gain +0.5 dBm OP1dB 18 GHz SATCOM LNA in 130 nm CMOS

This paper presents a K-band LNA in a 130 nm bulk CMOS technology. Device engineering has been done to the base device for shorter Lpoly and gate-oxide to achieve better performance from the transistor. An Inductive degenerated cascode low noise amplifier (LNA) is designed with thin-oxide body contacted devices for both the common source and common gate to achieve low noise figure (NF) and good gain. The measurements from the fabricated LNA show 1.18 dB NF and 16.2 dB peak gain with a 1.6 V supply at 9.12 mW power consumption.