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I – V testing during production is a valuable tool not only for evaluating and sorting cells and modules based on their performance but also for identifying the underlying causes driving the performance. The amount of available information is increased by the high volume of measurements, revealing some information that would not be accessible with a measurement of only a few samples. To make full use of I – V testing, a comprehensive measurement and analysis system is required that takes into consideration the characteristics of different device types. The goal of characterizing the electronic parameters of a solar cell at I – V test requires more than the typical I sc , V oc , power, and FF measurement. In addition to these traditional figures of merit, the complete characterization of the solar cell requires measurement of the substrate doping, the series resistance, the lifetime and surface recombination parameters, and reverse breakdown characteristics. This chapter discusses several distinct methods for characterizing cells and modules at I – V test, with a focus on making use of the large datasets available in production environments. An emphasis is placed on a set of four discrete topics enabled by these techniques.