Total Ionizing Dose and Proton Characterization of 12 LP+ FinFET Technology

The Total Ionizing Dose (TID) Response and Single-Event response of Global Foundries 12LP+ bulk FinFET process is characterized using Cobalt 60 gamma rays and 64 MeV proton beam. Low voltage (SG), high voltage (EG) NMOS and PMOS transistors as well as SRAM blocks are irradiated up to 300 $\operatorname{krad}\left(\mathrm{SiO}_{2}\right)$. Furthermore, the characterization includes the assessment of proton-induced Single-Event Upset (SEU) and Single-Event Latchup (SEL) in Flip-Flops, Dual Port SRAM, Single Port SRAM, and ESD protection circuits.