Printed CsMg–ZnO ETLs achieve over 9 % efficiency in PbS quantum dot solar cells

Zinc oxide (ZnO) is a key electron transport layer (ETL) material in next-generation lead sulfide (PbS) colloidal quantum dot solar cells (CQDSCs) due to its high transparency, strong exciton binding energy, and good electron mobility. Here, we demonstrate a scalable doctor-blading printing protocol for ZnO ETLs that integrates dual defect passivation with magnesium (Mg 2 ⁺) and caesium (Cs⁺) and employs solvent engineering to achieve uniform, defect-minimized films. Using a ternary solvent blend (methanol, chloroform, and 2-methoxyethanol) optimizes the ink's viscosity and boiling point, preventing particle migration and ensuring full substrate coverage. Our modified ZnO ink leads to improved crystallinity, smoother surfaces, and reduced trap states, boosting the fill factor (FF) and short-circuit current (J sc ). Consequently, we achieve a power conversion efficiency increase from 5.98 % to 9.53 % using a printed CsMg-ZnO film. Notably, 80 % of dual-doped devices exceeded 7.5 % efficiency, demonstrating high reproducibility and reliability. This performance enhancement underscores the effectiveness of dual metal ion treatment and solvent engineering strategies in overcoming printability challenges. Moreover, the compatibility of our approach with low-temperature processing and established coating techniques paves the way for seamless integration into large-scale manufacturing, bringing PbS CQDSCs closer to commercial viability. • Towards fully-printed PbS-CQDSCs with a scalable printing protocol for the ZnO-ETL. • Performance boost in PbS-CQDSCs through a dual metal ion treatment of ZnO nano-inks. • Solvent engineering of ZnO nano-inks enables controlled and uniform film deposition. • Improved device reproducibility with solvent-modified, metal ion-treated ZnO inks.