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Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> ) to form filters with low insertion loss and high selectivity. However, both the Q and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high-frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> of 11.8% and a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub><mml:mrow><mml:mi>Q</mml:mi></mml:mrow> <mml:mrow><mml:mi>p</mml:mi></mml:mrow> </mml:msub> </mml:math> of 236.6 at the parallel resonance frequency ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub><mml:mrow><mml:mi>f</mml:mi></mml:mrow> <mml:mrow><mml:mi>p</mml:mi></mml:mrow> </mml:msub> </mml:math> ) of 17.9 GHz. These resulting figures-of-merit are ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub><mml:mrow><mml:mi>FoM</mml:mi></mml:mrow> <mml:mrow><mml:mn>1</mml:mn></mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:msub> <mml:mrow> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> <mml:mi>Q</mml:mi></mml:mrow> <mml:mrow><mml:mi>p</mml:mi></mml:mrow> </mml:msub> </mml:mrow> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub><mml:mrow><mml:mi>FoM</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msub> <mml:mo>=</mml:mo> <mml:msub><mml:mrow><mml:mi>f</mml:mi></mml:mrow> <mml:mrow><mml:mi>p</mml:mi></mml:mrow> </mml:msub> <mml:msub><mml:mrow><mml:mi>FoM</mml:mi></mml:mrow> <mml:mrow><mml:mn>1</mml:mn></mml:mrow> </mml:msub> <mml:mo>×</mml:mo> <mml:msup><mml:mrow><mml:mn>10</mml:mn></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>9</mml:mn></mml:mrow> </mml:msup> </mml:mrow> </mml:math> ) 27.9 and 500, respectively. These and the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup><mml:mrow><mml:mi>k</mml:mi></mml:mrow> <mml:mrow><mml:mi>t</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn></mml:mrow> </mml:msubsup> </mml:math> are significantly higher than previously reported AlN/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at a ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.
Published in: Microsystems & Nanoengineering
Volume 11, Issue 1, pp. 19-19