The Future of GaN is Also High Voltage, High Current, and Bidirectional: (Invited)

In this talk, we present latest breakthrough in high-power GaN technologies: high-voltage rating up to 1200 V, high-current rating up to 170 A for a single die, short-circuit capability up to 5 μs, and monolithic bi-directional switches for novel, more compact circuit topologies for lighter, smaller, more efficient and more reliable power conversion systems for data-centers, artificial intelligence, transportation, and much more.