Analyses of oxygen precipitates in CZ-Si by X-ray diffuse scattering using parallel X-ray beam

Abstract X-ray diffuse scattering (XDS) is a powerful technique for studying the formation of bulk defects that cause lattice distortions in Czochralski silicon (CZ-Si). To quantitatively analyze oxygen precipitates (OP) in CZ-Si that are below the detection limit of infrared tomography (IR-T), we investigated the relationship between the XDS intensity and the IR-T analysis results obtained from various samples. X-ray rocking curve (XRC) profiles, which included XDS near 400 diffraction peaks on the obliquely polished surface of the CZ-Si wafers, were obtained using a synchrotron radiation X-ray diffractometer. By deriving the XDS-integrated intensities from these XRC profiles, we identified a significant and quantitative relation between the XDS characteristic intensity and the volume density and size of the OPs measured by IR-T. We also find that X-rays scattered from depths below 40 μm contribute to the characteristic intensity of XDS. These results provide critical information for quantitative analysis of OPs using XDS