Second-order nonlinear frequency conversion in InGaP-on-insulator waveguides

InGaP integrated on a silicon substrate has emerged as a promising platform for nonlinear and quantum photonics, offering high nonlinear conversion efficiency and scalability with silicon-based fabrication infrastructure. This work presents an experimental demonstration of sum- and difference-frequency generation (DFG) in InGaP waveguides. We generate light at 930 nm, 1550 nm, and 2325 nm, achieving conversion efficiencies of 4.5 ± 0.5 W^-1, 1.4 ± 0.2 W^-1, and 0.43 ± 0.04 W^-1, respectively. These results highlight the potential of InGaP-on-insulator for advanced photonic applications, including broadband infrared light generation and quantum-frequency conversion. We discuss a roadmap for this technology to achieve even broader wavelength coverage, higher efficiencies, and quantum-frequency conversion of single photons.