30 ps time resolution with 50 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si9.svg" display="inline" id="d1e188"> <mml:mi mathvariant="normal">μ</mml:mi> </mml:math> m thick silicon Low Gain Avalanche Detectors fabricated by Micron Semiconductor Ltd

Low Gain Avalanche Detectors (LGADs) are silicon sensors with an implanted p-doped multiplication layer that is designed to provide a gain between five and twenty. Most importantly, LGADs can be specifically engineered to provide excellent temporal resolution. To achieve the goal of producing a 4D tracking detector, where both excellent spatial and temporal resolution are attained, LGAD technology must be optimised. Promising variations, such as the iLGAD and AC-LGAD, are being developed. The technology shows promising prospects of fulfilling the 4D tracking requirements of future particle physics experiments. Micron Semiconductor Ltd. has fabricated LGADs with an active thickness of 50 μ m . The electrical performance has been measured by means of current–voltage characteristics and Transient Current Technique (TCT), while Minimum Ionising Particles (MIPs) from a Sr-90 source were used to measure the timing resolution, and compared with devices fabricated at IMB-CNM for reference. The fabricated devices were measured to have a gain of 5–10, a timing resolution of 26.5 ps using MIPs produced by a Sr-90 source, measured at a temperature of − 30 ° C . • 50 μ m active thickness LGADs were successfully fabricated by Micron Semiconductor Ltd • The devices were measured to have a gain of 5-10 with breakdown voltages above 150 V • Timing resolution of 26 . 5 ± 0 . 7 ps measured using MIPs was achieved in a sample LGAD