FET Corner Simulations That Preserve FET's Partial Correlations

In this work, we show how to obtain the standard deviations of device performance metrics (e.g., the delay of an inverter) with only a few corner simulation runs. Our approach of the corner simulation generates the correct standard deviation of device performance by preserving the partial correlations between the channel lengths of nFET and pFET used in the inverter. When the variations of FET channel lengths are small, such obtained standard deviation and correlation coefficients are exact.