Validation of dynamic RDS(on) and MOSFET paralleling topologies for high power applications

Paralleling MOSFETs is crucial in high-current applications where a single MOSFET cannot handle the required current. By distributing the current across multiple MOSFETs, this technique reduces losses, lowers operating temperatures, reduces cost and improves overall efficiency. The primary advantage is increased current capability, reducing overall resistance and device losses. Heat distribution across multiple MOSFETs maintains lower temperatures, enhancing system reliability. This topology introduces gate driver design complexities in parasitics, magnetics and active components and ensuring equal current sharing among MOSFETs. Variations in MOSFET parameters can lead to unequal current sharing. Engineers can validate FET paralleling topologies with the help of oscilloscope-based measurements such as total switching loss, dynamic on-resistance, threshold voltage, trigger delay, current split, Ton/Toff total current, etc. Dynamic plots provide intuitive visualizations of current sharing performance.