Experimental Investigation of the Performance Dependence on the Well-Thickness of a Single-Well GaAs/AlGaAs Superluminescent Diode

20250 citationsJournal Article

Authors

Wu Doudou · Beijing University of Posts and Telecommunications

Xiaomin Ren · Submicron Heterostructures for Microelectronics Research and Engineering Center

Liu Hao · Submicron Heterostructures for Microelectronics Research and Engineering Center

Qi Wang · Submicron Heterostructures for Microelectronics Research and Engineering Center

Huang Yongqing · Submicron Heterostructures for Microelectronics Research and Engineering Center

Abstract

The performance dependence on the well-thickness of a single-well GaAs/AlGaAs superluminescent diode is experimentally investigated. An optimal power-bandwidth product is achieved at a thickness of 90nm when the ripple-coefficient is kept not larger than 5%.

Topics & Keywords

Semiconductor Lasers and Optical Devices Photonic and Optical Devices Semiconductor Quantum Structures and Devices

Publication Details

DOI: 10.1109/icocn67308.2025.11145498

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Experimental Investigation of the Performance Dependence on the Well-Thickness of a Single-Well GaAs/AlGaAs Superluminescent Diode

Authors

Abstract

Topics & Keywords

Publication Details