Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon &amp; SiC NPN BJTs

20250 citationsJournal Articlehybrid Open Access

Authors

Chengjun Shen · University of Bristol

Saeed Jahdi · University of Bristol

Mana Hosseinzadehlish · University of Bristol

Phil Mellor · University of Bristol

Konstantinos Floros · Compound Semiconductor Centre (United Kingdom)

Ingo Lüdtke · Catapult

Abstract

This paper compares the static properties for Silicon & SiC BJTs when connected in parallel, under various operating temperatures at various base currents and collector currents. This includes analysis of forward I-V characteristics, on-state resistance, DC gain, forward transfer characteristics and reverse leakage current to provide insights on paralleling of SiC & SiC BJTs.

Topics & Keywords

Silicon Carbide Semiconductor Technologies Silicon and Solar Cell Technologies Advancements in Semiconductor Devices and Circuit Design

Publication Details

Published in: Key engineering materials

Volume 1021, pp. 75-83

DOI: 10.4028/p-njz1qy

Field-Weighted Citation Impact: 0.00

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Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon &amp;amp; SiC NPN BJTs

Authors

Abstract

Topics & Keywords

Publication Details

Static Analysis of Temperature-Dependence of Paralleled High Voltage Vertical Silicon & SiC NPN BJTs