Design of 30W Dual Channel Driver Amplifier for ISM Band Application

This paper describes design and development of 30W CW dual channel solid state power amplifier (SSPA) pallet using unmatched device. Selected power amplifier (PA) is based on Laterally-Diffused Metal-Oxide semiconductor (LDMOS) technology working in Class AB mode of operation. Load pull and source pull analysis have been performed on the nonlinear model of device. The measured power added efficiency (PAE), output power and gain of 30 W PA pallet is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\geq 45.2 \%, \geq 43.5 \text{dBm}$</tex> and 25.5 dB respectively over frequency band (2.4 to 2.5 GHz) and temperature for each channel. The designed driver amplifier pallet will be used as a driver amplifier for the design of 6KW SSPA microwave source for plasma applications. Roger 6035 HTC with design dielectric constant of 3.6 with 30mils thickness is used to implement PCB.