Early Detection of Wire Bond Degradation in IGBT Modules Using On-Chip Junction Temperature Sensor

This study presents an innovative approach to early detection of wire bond lift-off failures in power semiconductor modules (PSMs) using an integrated on-chip temperature sensor. Despite wire bond degradation being a dominant failure mechanism in PSMs, conventional monitoring methods typically detect failures too late for preventive intervention. Through systematic BiCycle testing combining power and thermal cycling stresses, it was demonstrated that the on-chip sensor provides reliable failure prewarning 15-20% before end-of-life criteria are met – significantly outperforming traditional temperature-sensitive electrical parameters (TSEPs) and negative temperature coefficient (NTC) thermistors. The sensor's direct junction temperature measurement capabilities enable more accurate thermal transient analysis without requiring complex thermal models. Results show consistent detection without false positives, presenting a significant advancement in predictive health monitoring for industrial drives and traction systems. This technology enables condition-based maintenance strategies that reduce costs while improving system availability and reliability in high-power applications.