Enhanced chemical vapor deposition of monolayer MoS ₂ films via a clean promoter

Two-dimensional (2D) transition metal dichalcogenides, exemplified by molybdenum disulfide (MoS₂), have shown exceptional potential for data-centered, energy-efficient electronic applications due to their unique electrical, optoelectronic, and mechanical properties. However, challenges such as the controllable synthesis of high-quality, large-area 2D MoS₂films and the mitigation of contamination during growth remain significant barriers to their integration into advanced technologies. Here, photoresist S1813 is innovatively utilized as a contamination-free growth promoter, enabling the clean and scalable synthesis of high quality 2D MoS₂on SiO₂/Si substrate with desirable grain structures via chemical vapor deposition. By optimizing the reactant concentration and S/Mo ratio, enhanced MoS₂growth with improved quality is achieved, as evidenced by the increased MoS₂flake size and coverage, alongside a strong photoluminescence A exciton peak at 1.84 eV. This approach facilitates the clean and selective growth of high-quality 2D MoS₂, establishing a robust pathway for the practical implementation of 2D MoS₂in next-generation electronic devices.