Simulating High-Voltage RF GaN HEMTs Using Fermi Kinetics Transport

This paper presents a unique physical investigation of the influence of a standard field management technique on the channel temperature in a high-voltage radio frequency gallium nitride (GaN) high electron mobility transistor (HEMT). A deterministic Boltzmann solver called Fermi kinetics transport (FKT) provides physical insight into the influence of the field management technique on the lattice temperature of a GaN HEMT at high power density operation. The results in this work could be useful for device engineers to understand the physical mechanisms for heat generation in GaN HEMTs and could be used for channel temperature mitigation strategies.