Molecular design of a positive tone organometal chemically amplified resist for small size contact hall by high-NA EUV lithography

Currently, some of the new resist platform have been investigated and metal oxide resist had been suggested as a positive tone material using polar solvent developer dissolving decomposed intermediate structure before cross linking reaction. However, Non-CAR resist sensitivity is limited by the reaction probability because of only one reaction per photon at maximum. Thus, Positive-tone MORs may have same fundamental sensitivity issues. Therefore, incorporating high-concentration EUV absorbers, chemical amplification, or other sensitivity enhancement techniques are crucial for high-sensitivity patterning of smaller contact holes with High/Hyper NA EUV. Previously, we proposed a positive tone organometal chemically amplified resist by making dissolution contrast though chain scission and polarity change to develop for nonpolar solvent and demonstrated positive tone pattering by using 150keV EB system with butyl acetate developer. In this conference, we will show a sub 16nm contact hole patterning with organic solvent developer by High NA EUV exposure tool and highly sensitivity enhancement using additional post exposure process.