Die-Edge Leakage Current for Stacked Silicon Photo Multiplier Device

20250 citationsJournal Article

Authors

John P. Hayes

Stephen Bellis

Daniel O’Keeffe

Vincenzo Sesta

E. P. Barbian · Vitalant

Rafael García · Vitalant

Julien Thiefian · Scottsdale Community College

K. McStay · ID-FISH Technology (United States)

Jeff Gambino ·

Abstract

Abstract A new leakage mechanism is observed related to laser grooving of bonded wafers. The recast debris from laser grooving can cause a leakage path between the upper substrate and the lower substrate. A simple method to reduce the leakage is to provide a mesa trench around the perimeter of the upper substrate.

Topics & Keywords

Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies Laser Material Processing Techniques

Publication Details

Published in: Proceedings - International Symposium for Testing and Failure Analysis

Volume 85212, pp. 357-360

DOI: 10.31399/asm.cp.istfa2025p0357

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Die-Edge Leakage Current for Stacked Silicon Photo Multiplier Device

Authors

Abstract

Topics & Keywords

Publication Details