Material Analysis of Cu End-Point Detection for Advanced Node PFIB Delayering Process Optimization

Abstract As integrated circuits continue to scale down to ever-smaller dimensions and increased complexity, traditional failure isolation & analysis (FA/FI), and sample preparation techniques face significant limitations. The increasing density of modern semiconductor devices, now advancing beyond 3 nm technology nodes, presents unprecedented challenges in precise layer-by-layer analysis. Over the past decade, Xenon (Xe) Plasma Focused Ion Beam (PFIB) gas assisted delayering has emerged as a standard industry technique for precise layer-by-layer delayering of integrated circuits.