Ultrafast Characterization of Gated and STI Diodes in Bulk FinFET and GAAFET Technologies

This study investigates forward-biased bulk FinFET and GAAFET diodes undergoing Ultrafast Transmission Line Pulse (UF-TLP) characterization. Correlating measured data of downscaled diodes with Technology Computer-Aided Design (TCAD) simulations shows the necessity of including impact ionization phenomena for fast transients in the picosecond regime during forward biasing.