GH10-UMS 100 nm GaN Technology

The next generation of UMS-GaN technology is the release of a node 100 nm identified as GH10. Performance enhancements were achieved with a combination of process and device optimization with a focus on parasitic reduction. Large signal measurements were performed at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$18 \text{GHz}, 30 \text{GHz}, 45 \text{GHz}$</tex> and 60 GHz. At 60 GHz, a maximum PAE of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$31-33 \%$</tex> is obtained with an associated output power of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.5 ~\mathrm{W}. \text{mm}^{-1}$</tex> and a linear gain around 8dB.