Analyzing the Characteristics of Strain-Induced SiNW Super-lattice pin Based Single-Pole-Single Throw Series-shunt and Shunt Switch at THz frequency

This study presents the potentiality of strain-induced SiNW super-lattice p+-i-n+ based Single-Pole-Single throw series-shunt and shunt SPST switching operation at THz-frequency region. In order to develop the SiNW, strained and unstrained Si layers are alternately incorporated into the device's active region. The strained Si layers are formed by the amalgamation of a 2% Ge mole fraction into the unstrained or intrinsic Si layer. The induced strain significantly enhances the effective-mobility of the electron which plays a vital role in the device's performance. The switching features of the designed THz switch have been investigated by employing the self-reliable Quantum Corrected Charge-Carrier Transport model along with PSpice software. The proposed Quantum Corrected Charge- Carrier Transport model has been verified through the experimental findings under almost identical operation circumstances.