Investigation of Si IGBT/SiC MOSFET Based Hybrid Switch with Common Gate Control

This paper investigates the behaviour of hybrid switch which is configured with Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor and Silicon Insulated Gate Bipolar Transistor in parallel, considering its potential use in high power inverter used in the vehicular technology. This configuration can offer cost effectiveness over Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor based inverter. On the other hand, it will be more efficient than Silicon Insulated Gate Bipolar Transistor based inverter. To validate this idea, a detailed study has been done on switching loss, conduction loss and the gate control strategies of the hybrid switch configuration.