Design and Development of 3/2-Level DAB SiC Converter for SST Applications

This paper presents the design, development, and experimental validation of a 3/2-level Dual Active Bridge (DAB) converter utilising Silicon Carbide (SiC) devices for Solid-State Transformer (SST) applications. The proposed converter architecture leverages a High-Frequency (HF) transformer to achieve superior power density and efficiency, making it a promising candidate for next-generation power conversion systems. The design utilises Zero Voltage Switching (ZVS) zone to benefit from reduced switching losses. Key contributions include the development of a 50 kHz transformer with amorphous metal cores, the implementation of a planar busbars to mitigate stray inductance effects and test rig design. Experimental results demonstrate the converter's operation at 50 kHz, achieving an efficiency of 95% at 15 kW output power. This research advances the state-of-the-art in SST technology by proposing the 3/2-Level DAB as the ‘heart’ of future SSTs, offering a high-performance, compact, and flexible solution for modern power systems.