Electrostatically doped WSe ₂ TFET: critical design rules for scalable and high-frequency logic applications

Abstract This paper investigates the performance of a lateral tunneling field-effect transistor leveraging electrostatic doping in a monolayer tungsten diselenide (WSe 2 ). By avoiding chemical doping of two-dimensional monolayer, the device circumvents conventional doping-related challenges, enabling enhanced scalability—a promising feature for future CMOS-compatible technologies. In this study, TCAD-based simulations are utilized to accurately predict the device behavior. Furthermore, Alternating current analysis is performed to extract key high-frequency metrics, including parasitic capacitance and gain-bandwidth product. Benchmarking against existing devices provides critical insights into the competitiveness of the proposed structure. The achieved performance metrics—such as an ON-current ( I ON ) of 177 μ A μ m −1 , a minimum subthreshold swing ( SS min ) of 43.68 mV dec −1 , and a maximum cutoff frequency ( f T, MAX ) of 320.3 GHz—demonstrate the device’s strong potential for both DC and RF applications.