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Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study

198882 citationsJournal Article

Authors

В. В. Коробцов · Institute of Automation and Control Processes

V.G. Lifshits · Institute of Automation and Control Processes

А. В. Зотов · Institute of Automation and Control Processes

Topics & Keywords

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Carbide Semiconductor Technologies

UN Sustainable Development Goals

Clean water and sanitation

Publication Details

Published in: Surface Science

Volume 195, Issue 3, pp. 466-474

DOI: 10.1016/0039-6028(88)90354-8

Field-Weighted Citation Impact: 5.46

Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study | Researchclopedia