Diode Laser Technology for Inertial Fusion Energy: Techniques for Scaling Yield and Power

Low €/Watt GaAs-based pump diodes are required for hyper-scale applications such as fusion. Progress in facet passivation allows 885 nm single emitters to operate reliably at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$40 \mathrm{W} / 200 \mu \mathrm{m}$</tex>, equivalent to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.5 \text{kW} / \text{bar}$</tex> (high Watts). Further, multi-wavelength in-situ metrology connects design, MOVPEgrowth and ICP-etching, for yield scaling (low €).