Thickness Scaling of Integrated Pt/(Al _0.9 Sc _0.1 )N/Pt Capacitor Stacks to 30 nm (Adv. Electron. Mater. 1/2026)

Ferroelectric Memory In their Research Article (10.1002/aelm.202500451), Hiroshi Funakubo and co-workers demonstrate that the total thickness of the device stack can be scaled down to 30 nm for the first time while maintaining a remanent polarization exceeding 100 μC cm−2 using an aluminum scandium nitride ((Al,Sc)N) film sandwiched between Pt electrodes. This next-generation nitride ferroelectric material enables aggressive thickness scaling for integration into ferroelectric memory, representing a significant advance for future electronic devices.