Parallel current sharing technology of SiC MOSFET with adaptive gate parameters

In order to meet the application requirements of SiC MOSFETs in medium- and high-power power electronic systems, it is necessary to operate SiC MOSFETs in parallel to enhance the power handling capability. This paper investigates the current-sharing challenges in paralleled SiC MOSFETs, encompassing both dynamic current imbalance during switching transients and static current imbalance under steady-state conditions. To mitigate both dynamic and static current imbalance, an adaptive gate resistance driving circuit and a multi-level adaptive gate voltage driving circuit, along with their corresponding control algorithms are proposed in this paper. The effectiveness of the proposed scheme was validated through simulation. The dynamic gate parameter control strategy reduces the static current unbalance degree from 28.97% to 8.65%, and the dynamic current unbalance degree from 29.457% to 18.76%. Thus, parallel SiC MOSFETs heating can be equalized to improve the service life of the power system.