Mitigation of Magnetic Field Radiation in IGBT Modules through Bond Wire Array Optimization

Insulated Gate Bipolar Transistors (IGBTs) are essential for high-power equipment. However, the internal packaging structures are primary sources of Magnetic Field Radiation (MFR), which induces unwanted noise and presents a significant challenge to system reliability. This paper addresses MFR mitigation by systematically optimizing the geometric arrangement of the hybrid bond wire array within the IGBT module. Utilizing finite element analysis, a parametric scan of array spacing parameters was performed. The results reveal that a designed bond wire layout can achieve great reduction in peak magnetic flux density, which is caused by the uniform current distribution and mutual cancellation of the magnetic fields.