Crystal Indium Oxide for 64-kbit 2T0C Memory with 5-ns Read Time, Monolithically Stacked on Si CMOS

A crystal indium oxide FET has an extremely low off leakage current and a high on-state current, and is thus suitable for a low-power and high-speed device. The crystal indium oxide FET is fabricated through the back end of line process and accordingly shows promise as a memory device. We propose a 2T0C memory monolithically stacked on Si CMOS. The read time of the 2T0C memory is shortened by canceling a voltage drop due to the capacitance coupling of a read word line. The 64-kbit 2T0C memory including the crystal indium oxide FET exhibits a read time of 5 ns, a write time of 5 ns, and a retention time exceeding 3,600 s, achieving high-speed access and long-term retention.