Physics-Based Model for Threshold Voltage Drift of Ovonic Threshold Switch (OTS)

This work investigates the cross time and temperature drift of the threshold voltage (V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"/>T ) of ovonic threshold switch (OTS) selector in the 3DXPoint<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TM</sup> technology. A physics-based model, accounting for the activation energy spectrum of structural relaxation (SR) phenomena at the basis of the V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> drift, has been developed. The model has been validated by comparison with an extensive electrical characterization of 3DXPoint<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TM</sup> chips.