CsCl seed layer engineering for buried-interface modification enabling >20% efficiency in single-source vapor-deposited perovskite solar cells

20260 citationsJournal Article

Authors

Lin Yang · Shanghai Polytechnic University

Junpeng Xie · Chinese Academy of Sciences

Zhenhuang SU · Chinese Academy of Sciences

Tianjiao Chu · Chinese Academy of Sciences

Yiran Yan · Chinese Academy of Sciences

Zhihong Xie · Chinese Academy of Sciences

Jin Huang · Jinergy (China)

Abstract

The CsCl seed layer enables regulated crystallization and interfacial engineering in single-source vapor-deposited perovskite films, leading to a PCE of 20.26%, which ranks among the highest-performing dry-processed single-junction PSCs.

Topics & Keywords

Perovskite Materials and Applications TiO2 Photocatalysis and Solar Cells Chemical and Physical Properties of Materials

Publication Details

Published in: Journal of Materials Chemistry A

DOI: 10.1039/d5ta10131j

Field-Weighted Citation Impact: 0.00

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CsCl seed layer engineering for buried-interface modification enabling &gt;20% efficiency in single-source vapor-deposited perovskite solar cells

Authors

Abstract

Topics & Keywords

Publication Details

CsCl seed layer engineering for buried-interface modification enabling >20% efficiency in single-source vapor-deposited perovskite solar cells