Electromigration in solid-state integrated structures with through holes

The paper studies the resistance to electromigration of structures with through holes not filled with tungsten and the effect of filling the holes with tungsten on the electromigration process. It is shown that with a decrease in the hole diameter in structures with holes not filled with tungsten, the mean failure time decreases due to poor aluminum coating and an increase in the ratio of the hole width to its length, and in the case of filling the holes with tungsten, the mean failure time does not depend on the diameter. It is shown that during electromigration, the resistance of the through hole changes due to the effect of high-density current, which causes silicon migration along aluminum with its subsequent deposition along the tungsten-aluminum interface.