Laser induced forward transfer of 2D materials and heterostructures for the digital fabrication of integrated photodetectors and modulators

Graphene’s broadband absorption, ultrafast carrier dynamics, and high mobility make it a promising candidate for integrated optoelectronic devices, but its incorporation into complex device architectures remains challenging. Laser-Induced Forward Transfer (LIFT) offers a digital and direct integration alternative to conventional transfer methods. Here we demonstrate LIFT as a single-step approach for precisely depositing graphene pixels onto photodetector structures on a silicon-nitride waveguide platform. As a preliminary study, monolayer graphene was transferred onto SiO₂ substrates to optimize defect-free transfer conditions. Optical, electrical, SEM, and Raman analyses confirm that graphene retains its structural integrity, highlighting LIFT’s potential for scalable integration of 2D materials into photonic integrated circuits.