Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack

NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (<i>V</i>_th) degradation under ionizing radiation, causing reliability challenges for space and defense applications. Here we show that ferroelectric field-effect transistors (FeFETs) with laminated gate stacks offer a promising route to achieving radiation resilience in vertical NAND technology. We demonstrate that large-memory-window, vertical NAND-compatible laminated poly-silicon-channel FeFETs with an 8 nm Hf_0.5Zr_0.5O₂/3 nm Al₂O₃/8 nm Hf_0.5Zr_0.5O₂ stack retain a full memory window and robust switching up to 10 Mrad(air) of the total ionizing dose (TID). Programmed and erased states show negligible TID-induced drift after 1 Mrad(air), while only the erased state degrades by ∼2 V at 10 Mrad(air). Technology computer-aided design (TCAD) modeling attributes these asymmetric shifts to state-dependent traps. Compared to charge-trap NAND, laminated FeFETs exhibit ∼30-fold lower <i>V</i>_th degradation per unit dose, positioning them as superior radiation-resilient storage candidates.