Metal-modulated growth of phase-pure cubic InGaN for red-emitting bulk layers and quantum wells

Plasma-enhanced Molecular Beam Epitaxy grown cubic InGaN bulk and quantum wells targeting with red emission are grown n conventional and metal-modulated epitaxy (MME). MME-grown samples show reduced surface roughness, complete suppression of hexagonal inclusions, and improved phase purity. Using PL spectroscopy and XRD, we demonstrate enhanced structural and similar optical quality in MME bulk and QW samples. Temperature- and power-dependent luminescence measurements reveal distinct recombination channels linked to extended QW states broadened by compositional fluctuations and highly localized excitons. This growth approach enables efficient red InGaN emitters, advancing III-nitride photonics for micro-LEDs and visible light applications.