Study on the Effect of Annealing on Ga₂O₃ Thin Films Deposited on Silicon by RF Sputtering

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Authors

Ana Sofia Sousa · Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias

Duarte Magalhães Esteves · Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias

Tiago T. Robalo · University of Lisbon

Mário S. Rodrigues · University of Lisbon

K. Lorenz · Instituto Superior de Gestão

Marco Peres · Instituto Superior de Gestão

Abstract

This dataset is comprised of atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and ellipsometry measurements performed on Ga₂O₃ thin films deposited on silicon and annealed at different temperatures.

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Publication Details

Published in: Zenodo (CERN European Organization for Nuclear Research)

DOI: 10.5281/zenodo.18876038

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Study on the Effect of Annealing on Ga₂O₃ Thin Films Deposited on Silicon by RF Sputtering

Authors

Abstract

Topics & Keywords

Publication Details