An In-Depth Exploration into the Numerical Simulation and Efficiency Enhancement for Tin-Based Perovskite Solar Cells by a thorough Comparative Analysis

<ns3:p> Background To enhance the efficiency and stability of perovskite solar cells (PSCs), methylammonium tin triiodide (CH₃NH₃SnI₃) has emerged as a promising lead-free absorber layer possessing greater optical absorption coefficient and longer carrier diffusion length. Graphene oxide (GO) has been used as a hole transport layer (HTL) owing to its outstanding properties, stable performance, high charge mobility, excellent mechanical, electrical, thermal, and optical properties economic processing, large-scale production scalability, and superior dispersibility in multiple solvents. Titanium dioxide (TiO₂) has been utilized as an electron transport layer due to its affordability, excellent chemical stability, high electron mobility, and well-aligned conduction band, which supports efficient charge extraction and transport in photovoltaic devices. Fluorine-doped tin oxide (FTO) has been used as a transparent and conductive substrate due to its excellent electrical conductivity, mechanical hardness, chemical inertness, thermal stability, and antireflective properties. Method In this study, two solar cell structures, D1(GO/CH <ns3:sub>3</ns3:sub> NH <ns3:sub>3</ns3:sub> SnI <ns3:sub>3</ns3:sub> /TiO <ns3:sub>2</ns3:sub> /FTO) and D2(CH <ns3:sub>3</ns3:sub> NH <ns3:sub>3</ns3:sub> SnI <ns3:sub>3</ns3:sub> /TiO <ns3:sub>2</ns3:sub> /FTO), were modelled using SCAPS-1D software that studies device performance by solving fundamental semiconductor equations including Poisson’s equation, carrier transport equations, and continuity equations. Moreover, the thickness, acceptor density, and defect density of the absorber layer and HTL were optimized for the D1 structure and thickness, and the acceptor density and defect density of the absorber layer were optimized for the D2 structure. Result After optimization of the essential parameters, structures exhibit the best output with Fill factor (FF) 79.14 %, Open circuit voltage (V <ns3:sub>oc</ns3:sub> ) 0.84 V, short circuit current density (J <ns3:sub>sc</ns3:sub> ) 31.78 mA/cm <ns3:sup>2</ns3:sup> , efficiency (ɳ) 21.28 % for D1 and with Fill factor (FF) 81.73 %, Open circuit voltage (V <ns3:sub>oc</ns3:sub> ) 0.78 V, short circuit current density (J <ns3:sub>sc</ns3:sub> ) 31.91 mA/cm <ns3:sup>2</ns3:sup> , efficiency (ɳ) 20.52 % for D2. Conclusion The results indicate that the proposed cell functions well at 300 K temperature for D1 and 357 K temperature for D2, and both devices can be commercially utilized. </ns3:p>